Open AccessGaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV
Author(s) -
Herbecq N.,
RochJeune I.,
Linge A.,
Grimbert B.,
Zegaoui M.,
Medjdoub F.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.1684
Subject(s) - materials science , transistor , optoelectronics , substrate (aquarium) , breakdown voltage , silicon , voltage , power semiconductor device , high voltage , threshold voltage , electrical engineering , engineering , oceanography , geology
A three‐terminal breakdown voltage over 3 kV is reported on AlGaN/GaN high‐electron‐mobility transistors (HEMTs) grown on silicon (Si) (111) substrate with a buffer thickness of 5.5 µm. The breakdown voltage of the 1.5 × 50 μm 2 devices has been improved by more than 200% by applying a local substrate removal all around the drain of the transistors in order to suppress the parasitic substrate conduction phenomenon. This establishes a new record breakdown voltage for GaN‐on‐silicon lateral power devices while maintaining a low specific on‐resistance of about 10 mΩ · cm 2 .