GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV | Zendy

Herbecq N. | Zendy; RochJeune I. | Zendy; Linge A. | Zendy; Grimbert B. | Zendy; Zegaoui M. | Zendy; Medjdoub F. | Zendy

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GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV

Author(s) -

Herbecq N.,

RochJeune I.,

Linge A.,

Grimbert B.,

Zegaoui M.,

Medjdoub F.

Publication year - 2015

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2015.1684

Subject(s) - materials science , transistor , optoelectronics , substrate (aquarium) , breakdown voltage , silicon , voltage , power semiconductor device , high voltage , threshold voltage , electrical engineering , engineering , oceanography , geology

A three‐terminal breakdown voltage over 3 kV is reported on AlGaN/GaN high‐electron‐mobility transistors (HEMTs) grown on silicon (Si) (111) substrate with a buffer thickness of 5.5 µm. The breakdown voltage of the 1.5 × 50 μm 2 devices has been improved by more than 200% by applying a local substrate removal all around the drain of the transistors in order to suppress the parasitic substrate conduction phenomenon. This establishes a new record breakdown voltage for GaN‐on‐silicon lateral power devices while maintaining a low specific on‐resistance of about 10 mΩ · cm 2 .

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