Open AccessFirst demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm
Author(s) -
Majid M.A.,
AlJabr A.A.,
Oubei H.M.,
Alias M.S.,
Anjum D.H.,
Ng T.K.,
Ooi B.S.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.1658
Subject(s) - laser , materials science , optoelectronics , wavelength , semiconductor laser theory , semiconductor , fabrication , orange (colour) , optics , physics , medicine , alternative medicine , pathology
The fabrication of orange‐emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.