Open AccessImproved artificial neural network RF noise model for MOSFETs operating in avalanche region
Author(s) -
Lee ChieIn,
Lin YanTing,
Lin WeiCheng
Publication year - 2016
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.1607
Subject(s) - artificial neural network , noise (video) , electronic engineering , avalanche photodiode , backpropagation , computer science , engineering , electrical engineering , artificial intelligence , detector , image (mathematics)
An artificial neural network (ANN)‐based noise model of MOSFETs for breakdown operation is presented for the first time. This ANN architecture for avalanche noise model determination is developed using a feed‐forward back propagation neural network program with optimisation algorithm of Levenberg Marquardt. Good agreement between measured and simulated noise parameters is achieved in the breakdown region. This simple and accurate breakdown characterisation method based on the ANN can be applicable to noise modelling for devices operating in the breakdown region.