Open AccessTransconductance improvement technique for bulk‐driven OTA in nanometre CMOS process
Author(s) -
Zhao Xiao,
Fang Huajun,
Ling Tong,
Xu Jun
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.1559
Subject(s) - transconductance , operational transconductance amplifier , cmos , electronic engineering , bandwidth (computing) , scaling , performance improvement , amplifier , materials science , computer science , electrical engineering , transistor , engineering , operational amplifier , telecommunications , mathematics , voltage , operations management , geometry
A transconductance improvement technique for a bulk‐driven operational transconductance amplifier (OTA) working in the weak inversion region is presented. Using the quasi‐floating gate method, the proposed technique achieves larger transconductance improvement than conventional approaches with the CMOS technologies scaling. Moreover, its enhanced performance is at no expense of the power budget. Simulated on UMC 180 nm technology, the results demonstrate that the proposed bulk‐driven OTA achieves more than two times gain–bandwidth improvement than that of the traditional counterpart with the same power.