Open AccessExperimental observation of RF avalanche gain in GaN‐based PN junction diodes
Author(s) -
Fay P.,
Aktas O.,
Bour D.,
Kizilyalli I.C.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.1551
Subject(s) - homojunction , materials science , optoelectronics , diode , avalanche photodiode , reflection coefficient , reflection (computer programming) , radio frequency , avalanche diode , amplitude , electric field , optics , physics , electrical engineering , voltage , doping , detector , breakdown voltage , quantum mechanics , computer science , programming language , engineering
Radio‐frequency (RF) reflection gain in GaN homojunction p‐n diode structures has been observed experimentally. A vertical p + /n structure grown on a native GaN substrate was used to achieve the high internal electric fields necessary to induce impact ionisation in GaN while minimising the effects of dislocations on the device performance. Amplitude and phase signatures in the measured RF reflection coefficient indicate the onset of impact ionisation within the device, with reflection gain observed at frequencies above 350 MHz. The magnitude of the measured gain is consistent with theoretical estimates of impact ionisation parameters, and the bias dependence of the measured reflection phase response is consistent with avalanche as the gain mechanism.