Integratable trench MOSFET with ultra‐low specific on‐resistance

A novel integratable metal–oxide–semiconductor field‐effect transistor (MOSFET) with a trench source (TS) and a trench gate (TG) (TS–TG MOSFET) is proposed. The TS and TG cause a strong assistant depletion effect and thus dramatically increase the N ‐drift doping concentration ( N d ). Moreover, an accumulation layer beside the TG is formed and offers a continuous low‐resistance path in the on‐state. Therefore, the novel MOSFET effectively reduces specific on‐resistance ( R on,sp ). The TS–TG MOSFET not only has the merits of low R on,sp and the easy parallel connection of vertical double‐diffused MOS, but also possesses the advantage of ease of integration like the LDMOS. The breakdown voltage (BV) of 61 V and the R on,sp of 0.133 mΩ cm 2 are obtained for the TS–TG MOSFET, with a significant optimised trade‐off between R on,sp and BV.