Open AccessIntegratable trench MOSFET with ultra‐low specific on‐resistance
Author(s) -
Yin Chao,
Wei Jie,
Zhou Kun,
Luo Xiaorong
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.1493
Subject(s) - mosfet , trench , materials science , ldmos , optoelectronics , breakdown voltage , transistor , doping , field effect transistor , threshold voltage , electrical engineering , voltage , layer (electronics) , nanotechnology , engineering
A novel integratable metal–oxide–semiconductor field‐effect transistor (MOSFET) with a trench source (TS) and a trench gate (TG) (TS–TG MOSFET) is proposed. The TS and TG cause a strong assistant depletion effect and thus dramatically increase the N ‐drift doping concentration ( N d ). Moreover, an accumulation layer beside the TG is formed and offers a continuous low‐resistance path in the on‐state. Therefore, the novel MOSFET effectively reduces specific on‐resistance ( R on,sp ). The TS–TG MOSFET not only has the merits of low R on,sp and the easy parallel connection of vertical double‐diffused MOS, but also possesses the advantage of ease of integration like the LDMOS. The breakdown voltage (BV) of 61 V and the R on,sp of 0.133 mΩ cm 2 are obtained for the TS–TG MOSFET, with a significant optimised trade‐off between R on,sp and BV.