Open AccessStudy of two‐dimensional electron gases wave function in double‐heterojunction transistors
Author(s) -
Cao Y.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.1282
Subject(s) - heterojunction , fermi gas , high electron mobility transistor , transistor , wave function , electron , electron density , distribution function , function (biology) , condensed matter physics , materials science , computational physics , physics , atomic physics , quantum mechanics , voltage , evolutionary biology , biology
To study the electron transport properties in high electron mobility transistors (HEMTs), it is essential to have a correct estimation for electron density distribution. The introduction of back barriers in GaN‐based HEMTs leads to a modified profile of a two‐dimensional (2D) electron wave function, which can no longer be described by the standard Fang‐Howard model. To address this change, a numerical model is developed for the wave function calculation based on the variational Hartree method. An electron density profile in the GaN channel with AlGaN top and back barriers has been simulated. The results are in good agreement with those obtained from self‐consistent Poisson‐Schrödinger simulation. The centroid of the 2D electron gas is also calculated as a function of the Al composition in the AlGaN back barrier.