Open AccessAnalysis of kink phenomenon in S 11 ‐parameter of standard RF MOSFETs
Author(s) -
Ahn Jahyun,
Lee Seonghearn
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.1270
Subject(s) - capacitance , electrical impedance , quadratic equation , phase (matter) , parameter space , smith chart , physics , condensed matter physics , electrical engineering , materials science , mathematics , engineering , impedance matching , quantum mechanics , statistics , electrode , geometry
For the first time, the low‐frequency kink phenomenon in the S 11 ‐parameter of standard MOSFETs fabricated without any degradation of RF performances that exists in previous works is reported and its dependence on the gate finger number is analysed. The kink phenomenon is notable only for wide total gate width devices that show abrupt increase of a negative phase angle of the S 11 ‐parameter in the low‐frequency region, because of a widening space between adjacent resistance circles in the Smith chart. This phase increase originated from a quadratic increase of the low‐frequency input capacitance against the gate finger number due to a constant load impedance for the S 11 ‐parameter measurement.