Open AccessDetermining optimal switching speed for memristors in neuromorphic system
Author(s) -
Yakopcic C.,
Taha T.M.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.1145
Subject(s) - neuromorphic engineering , memristor , switching time , memistor , electronic engineering , computer science , voltage , resistive random access memory , non volatile memory , electrical engineering , artificial neural network , artificial intelligence , engineering , computer hardware
As non‐volatile memory based on resistive switching becomes more mature, memristor devices with very fast switching times are becoming more prominent. However, this reported work shows that memristor devices with slow switching times (of about 10 µs) are more appropriate for use in neuromorphic systems. This is done by modelling a series of memristors that differ in their switching time. Simulation of a memristor‐based neuromorphic circuit is performed using each of these modelled devices. Devices with a high switching speed require unrealistically small voltage pulses to incrementally change the memristor resistance.