Demonstrating 1 nm‐oxide‐equivalent‐thickness La 2 O 3 and HfO 2 multi‐layer composite oxides on In 0.53 Ga 0.47 As MOS capacitor

The use of a high k composite dielectric composed of La 2 O 3 and HfO 2 layers as the gate dielectric for In 0.53 Ga 0.47 As MOS application is proposed. Two multi‐layer structures of La 2 O 3 (1 nm)/HfO 2 (1 nm) and La 2 O 3 (0.5 nm)/HfO 2 (0.5 nm) were deposited and annealed at 450 and 500°C for device performance comparison. X‐ray photoelectron spectroscopy, TEM and C – V measurements were used for the interface analysis between the oxide and the semiconductor. Finally, a 1 nm equivalent‐oxide‐thickness dielectric with small hysteresis of 88 mV and D it of 1.9 × 10 12 cm −2 eV −1 was achieved for six layers of an La 2 O 3 (0.5 nm)/HfO 2 (0.5 nm) composite oxide structure on an In 0.53 Ga 0.47 As MOS capacitor with a post‐deposition annealing temperature of 450°C.