Open AccessResonant tunnelling diode photodetector operating at near‐infrared wavelengths with high responsivity
Author(s) -
Dong Yu,
Xu Jianxing,
Wang Guanglong,
Ni Haiqiao,
Pei Kangming,
Chen Jianhui,
Gao Fengqi,
Li Baochen,
Niu Zhichuan
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.1041
Subject(s) - responsivity , photodetector , optoelectronics , quantum tunnelling , materials science , diode , molecular beam epitaxy , wavelength , infrared , resonant tunneling diode , detector , absorption (acoustics) , biasing , dark current , optics , layer (electronics) , voltage , epitaxy , quantum well , physics , laser , nanotechnology , quantum mechanics , composite material
Resonant tunnelling diode photodetectors with a 600 nm In 0.53 Ga 0.47 As absorption layer were fabricated by molecular beam epitaxy. The current–voltage characteristics of devices with different mesa diameters were tested and the negative differential resistance was observed in all devices. The responsivity of the detector was measured to be 4.19 × 10 5 A/W at 77 K and 1.92 × 10 4 A/W at room temperature under incident light with a power of 3.1 nW.