Open Access16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si 3 N 4 as gate insulator
Author(s) -
Zhang Zhili,
Yu Guohao,
Zhang Xiaodong,
Tan Shuxin,
Wu Dongdong,
Fu Kai,
Huang Wei,
Cai Yong,
Zhang Baoshun
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.1018
Subject(s) - materials science , optoelectronics , chemical vapor deposition , silicon on insulator , insulator (electricity) , silicon
An AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS‐HEMT) on Si substrate was obtained with 18 nm silicon nitride (Si 3 N 4 ) grown by low‐pressure chemical vapour deposition (LPCVD) as the gate insulator. The D‐mode MIS‐HEMT shows a high I dss of 16.8 A at V g = 3 V, a high breakdown voltage (BV) of 600 V and a low‐specific on‐resistance of 2.3 mΩ·cm 2 . The power device figure of merit (FOM = BV 2 / R on,sp ) is calculated as 157 MW·cm −2 . The good insulation effects of LPCVD‐Si 3 N 4 were also demonstrated by the low gate leakage current of 154 nA at V ds = 600 V and V gs = −14 V. Furthermore, an E‐mode device was realised by a low‐voltage silicon metal–oxide‐semiconductor field‐effect transistor in series; the V th was determined to be 2.6 V. The high I dss , low‐specific on‐resistance, high BV and positive V th show the potential and advantages of GaN MIS‐HEMTs for power switching applications.