Open AccessMicrochip laser Q‐switched with GaInNAs/GaAs SESAM emitting 204 ps pulses at 1342 nm
Author(s) -
Nikkinen J.,
Korpijärvi V.M.,
Leino I.,
Härkönen A.,
Guina M.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.1000
Subject(s) - materials science , laser , optoelectronics , gallium arsenide , saturable absorption , quantum well , optics , nitride , fiber laser , nanotechnology , physics , layer (electronics) , wavelength
A 1342 nm Nd:YVO 4 microchip laser is reported, Q‐switched with a dilute nitride GaInNAs/GaAs saturable absorber mirror. The laser produced optical pulses as short as 204 ps with 2.3 MHz repetition rate and 24 mW average output power. In comparison to conventional InP‐based saturable absorber mirrors, the advantage of the proposed approach is the availability of excellent Bragg mirror materials that enable high reflectivity and more flexibility in designing the non‐linear parameters owing to the use of lattice matched GaInNAs/GaAs quantum wells.