High‐performance dual‐channel InGaAs MOSFET for small signal RF applications

An indium gallium arsenide (InGaAs) dual‐channel metal–oxide‐semiconductor field‐effect transistor (DCMOSFET) for high‐frequency small signal applications is proposed. The gate electrode of the proposed device is placed in a trench to create two n‐channels in the p‐base. The simultaneous conduction of two channels provides significant improvement in all the performance parameters. Two‐dimensional (2D) simulations are performed to evaluate and compare the performance of the DCMOSFET with that of the conventional MOSFET. At 60 nm gate length, the proposed device provides 92% higher drain current, nearly two times improvement in peak transconductance, 50% increase in cutoff frequency and 74% higher maximum frequency of oscillation with better control over the short channel effects as compared with the conventional device.