Open Access30 GHz bandwidth 850 nm VCSEL with sub‐100 fJ/bit energy dissipation at 25–50 Gbit/s
Author(s) -
Haglund E.,
Westbergh P.,
Gustavsson J.S.,
Haglund E.P.,
Larsson A.,
Geen M.,
Joel A.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.0785
Subject(s) - vertical cavity surface emitting laser , dissipation , gigabit , bandwidth (computing) , optoelectronics , bit (key) , optics , physics , materials science , electronic engineering , laser , computer science , telecommunications , engineering , computer network , thermodynamics
A high‐speed and energy‐efficient oxide‐confined 850 nm vertical‐cavity surface‐emitting laser (VCSEL) for optical interconnects is presented. A record‐high modulation bandwidth of 30 GHz is reached for a 3.5 µm oxide aperture VCSEL, with 25 GHz bandwidth already at a bias current of 1.8 mA. The high bandwidth at low currents enables energy‐efficient transmission with a dissipated heat energy in the VCSEL of <100 fJ/bit at 25, 40 and 50 Gbit/s.