30 GHz bandwidth 850 nm VCSEL with sub‐100 fJ/bit energy dissipation at 25–50 Gbit/s | Zendy

Haglund E. | Zendy; Westbergh P. | Zendy; Gustavsson J.S. | Zendy; Haglund E.P. | Zendy; Larsson A. | Zendy; Geen M. | Zendy; Joel A. | Zendy

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30 GHz bandwidth 850 nm VCSEL with sub‐100 fJ/bit energy dissipation at 25–50 Gbit/s

Author(s) -

Haglund E.,

Westbergh P.,

Gustavsson J.S.,

Haglund E.P.,

Larsson A.,

Geen M.,

Joel A.

Publication year - 2015

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2015.0785

Subject(s) - vertical cavity surface emitting laser , dissipation , gigabit , bandwidth (computing) , optoelectronics , bit (key) , optics , physics , materials science , electronic engineering , laser , computer science , telecommunications , engineering , computer network , thermodynamics

A high‐speed and energy‐efficient oxide‐confined 850 nm vertical‐cavity surface‐emitting laser (VCSEL) for optical interconnects is presented. A record‐high modulation bandwidth of 30 GHz is reached for a 3.5 µm oxide aperture VCSEL, with 25 GHz bandwidth already at a bias current of 1.8 mA. The high bandwidth at low currents enables energy‐efficient transmission with a dissipated heat energy in the VCSEL of <100 fJ/bit at 25, 40 and 50 Gbit/s.

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