Method for determination of capture velocity of charge carriers into quantum well in semiconductor laser | Zendy

Sokolova Z.N. | Zendy; Bakhvalov K.V. | Zendy; Lyutetskiy A.V. | Zendy; Pikhtin N.A. | Zendy; Tarasov I.S. | Zendy; Asryan L.V. | Zendy

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Method for determination of capture velocity of charge carriers into quantum well in semiconductor laser

Author(s) -

Sokolova Z.N.,

Bakhvalov K.V.,

Lyutetskiy A.V.,

Pikhtin N.A.,

Tarasov I.S.,

Asryan L.V.

Publication year - 2015

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2015.0605

Subject(s) - semiconductor , optoelectronics , laser , charge carrier , semiconductor laser theory , quantum well , materials science , semiconductor device , carrier lifetime , physics , optics , nanotechnology , silicon , layer (electronics)

A simple method for the determination of the capture velocity of charge carriers from a three‐dimensional (3D) region (waveguide region) into a 2D region (quantum well) is proposed. The method is based on measurement of the threshold current density and internal differential quantum efficiency in a semiconductor laser structure. The method also allows determining the 2D carrier density in a quantum well, which is otherwise not easy to measure in a multilayer laser structure.

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