Open AccessMethod for determination of capture velocity of charge carriers into quantum well in semiconductor laser
Author(s) -
Sokolova Z.N.,
Bakhvalov K.V.,
Lyutetskiy A.V.,
Pikhtin N.A.,
Tarasov I.S.,
Asryan L.V.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.0605
Subject(s) - semiconductor , laser , quantum well , charge carrier , measure (data warehouse) , optoelectronics , semiconductor laser theory , quantum dot laser , materials science , quantum well laser , carrier lifetime , charge carrier density , quantum , physics , optics , computer science , quantum mechanics , silicon , doping , database
A simple method for the determination of the capture velocity of charge carriers from a three‐dimensional (3D) region (waveguide region) into a 2D region (quantum well) is proposed. The method is based on measurement of the threshold current density and internal differential quantum efficiency in a semiconductor laser structure. The method also allows determining the 2D carrier density in a quantum well, which is otherwise not easy to measure in a multilayer laser structure.