Open AccessEfficient replica bitline technique for variation‐tolerant timing generation scheme of SRAM sense amplifiers
Author(s) -
Lu Wenjuan,
Peng Chunyu,
Tao Youwu,
Li Zhengping
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2015.0574
Subject(s) - replica , static random access memory , sense amplifier , sense (electronics) , amplifier , electronic engineering , voltage , scheme (mathematics) , standard deviation , computer science , engineering , electrical engineering , mathematics , cmos , statistics , art , mathematical analysis , visual arts
An efficient replica bitline (RBL) technique for reducing the variation of sense amplifier enable (SAE) timing is proposed. Both RBLs and four‐fold replica cells compared with the conventional RBL technique are utilised to favour the desired operations. Simulation results show that the standard deviation of SAE can be suppressed by 44.25% and the cycle time is also reduced by ∼30% at a 0.8 V supply voltage in TSMC 65 nm technology. Additionally, the area of the proposed scheme is nearly the same as that of the conventional RBL scheme.