Open AccessNonlinear modelling of dynamic self‐heating in 28 nm bulk complementary metal–oxide semiconductor technology
Author(s) -
Sahoo A.K.,
Fregonese S.,
Scheer P.,
Celi D.,
Juge A.,
Zimmer T.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.0200
Subject(s) - nonlinear system , materials science , semiconductor , oxide , optoelectronics , metal , electronic engineering , engineering , metallurgy , physics , quantum mechanics
A new and simple approach for nonlinear modelling of the dynamic self‐heating effect in bulk complementary metal–oxide semiconductor (CMOS) field effect transistors is presented. Low‐frequency S ‐parameter measurements are performed in 28 nm bulk CMOS technology at room temperature between a 10 kHz and 3 GHz frequency range and the thermal impedance ( Z TH ) of the devices is extracted. The proposed model is validated through the measurements for different bias points. The results obtained demonstrate a reasonable agreement between theoretical prediction and experimental data.