Open AccessSymmetric bipolar charge‐plasma transistor with extruded base for enhanced performance
Author(s) -
Bramhane L.K.,
Upadhyay N.,
Veluru J.R.,
Singh J.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2015.0115
Subject(s) - cutoff frequency , bipolar junction transistor , materials science , common emitter , silicon , optoelectronics , base (topology) , transistor , electron , hafnium , plasma , doping , charge (physics) , metal , heterostructure emitter bipolar transistor , electrical engineering , atomic physics , voltage , physics , engineering , zirconium , mathematical analysis , mathematics , quantum mechanics , metallurgy
A new structure for a symmetric bipolar charge‐plasma transistor device with an extruded base is proposed. The charge plasma and extruded base concepts are used to increase the current gain and cutoff frequency of the proposed device, respectively. Metal contact hafnium accumulates electrons in the emitter/collector (E/C) regions and platinum accumulates holes in the base region. Using the metal contact of different work functions, the electrons and holes are accumulated in a lightly doped silicon film to create the E/C and the base regions, respectively. Two‐dimensional simulations of the proposed device demonstrate that it has a higher current gain of 9 × 10 6 and a peak cutoff frequency ( f T ) of 87.3 GHz. Furthermore, the f T for different silicon film thicknesses and base widths is optimised.