Open AccessWideband harmonic‐tuned CMOS power amplifier with 19.5 dBm output power and 22.6% PAE over entire X‐band
Author(s) -
Park Seungwon,
Jeon Sanggeun
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.4541
Subject(s) - wideband , dbm , amplifier , electrical engineering , cmos , power (physics) , power bandwidth , harmonic , materials science , power added efficiency , electronic engineering , rf power amplifier , optoelectronics , engineering , physics , acoustics , quantum mechanics
A wideband power amplifier (PA) with high output power and efficiency over the entire X‐band is implemented in a 0.11 μm CMOS technology. To achieve high efficiency in the wideband, a new harmonic‐tuned technique is proposed for the output matching network of the PA, while no radio frequency (RF) choke is used for DC bias. Measurement results show that the output power and power‐added efficiency (PAE) are no less than 19.5 dBm and 22.6%, respectively, over the entire X‐band. The peak PAE is 28.9% with an output power of 20.3 dBm at 9 GHz.