Open AccessGate dielectric constant engineering for suppression of ambipolar conduction in CNTFETs
Author(s) -
Ossaimee M.,
Gamal S.,
Shaker A.
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.4453
Subject(s) - ambipolar diffusion , quantum tunnelling , dielectric , materials science , thermal conduction , band diagram , high κ dielectric , optoelectronics , mosfet , gate dielectric , constant (computer programming) , condensed matter physics , electrical engineering , band gap , transistor , physics , electron , voltage , engineering , computer science , quantum mechanics , composite material , programming language
MOSFET‐like CNTFETs suffer from band‐to‐band tunnelling, which in turn causes ambipolar conduction. A new structure based on the gate dielectric constant engineering is proposed. It is observed that the dielectric constant ( k ) plays an important role in modifying the energy band diagram. Therefore, by selecting suitable values of k over the source, channel and drain regions the tunnelling path at the source–channel interface could be eliminated. Consequently, the ambipolar conduction is suppressed.