Open AccessEnhanced ESD power clamp for antenna switch controller with SOI CMOS technology
Author(s) -
Yu Kai,
Li Sizhen,
Zhang Zhihao,
Zhang Gary,
Tong Qiaoling,
Zou Xuecheng
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.4160
Subject(s) - cmos , electrostatic discharge , electrical engineering , transistor , clamper , silicon on insulator , electronic engineering , controller (irrigation) , antenna (radio) , engineering , gate oxide , voltage , materials science , optoelectronics , silicon , agronomy , biology
An enhanced electrostatic discharge (ESD) power clamp for an antenna switch controller with silicon‐on‐insulator (SOI) complementary metal‐oxide‐semiconductor (CMOS) technology is presented. The gate drive voltages of larger n‐type metal‐oxide‐semiconductor transistors in a stacked configuration of a RC‐triggered power clamp have been optimised to obtain larger discharging capability and shorter turn‐on time compared to the conventional topology. The proposed ESD power clamp circuits are implemented in a double‐pole five‐throw antenna switch controller and the experimental results confirm the validity of this approach.