Open AccessX‐band low‐phase noise oscillator employing substrate integrated waveguide dual‐mode filter
Author(s) -
Yang Ziqiang,
Luo Bangyu,
Dong Jun,
Yang Tao
Publication year - 2015
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.4106
Subject(s) - phase noise , dbc , resonator , materials science , offset (computer science) , figure of merit , high electron mobility transistor , noise temperature , voltage controlled oscillator , optoelectronics , physics , electrical engineering , transistor , optics , engineering , voltage , computer science , programming language
A novel low‐phase noise oscillator employing a substrate integrated waveguide (SIW) dual‐mode bandpass filter as a frequency stabilisation element within its feedback loop is proposed. The SIW dual‐mode filter is implemented based on the use of the two degenerate modes (TE 102 and TE 201 ) and has a larger group delay peak than the conventional SIW cavity resonator. By taking advantage of the large group delay peak, the phase noise of the oscillator has significant improvement. An X‐band oscillator with a GaAs HEMT packaged transistor has been designed and measured. At an oscillation frequency of 9.04 GHz, the measured phase noise is −111.9 dBc/Hz at 100 kHz offset. The output power is 6.1 dBm and the figure of merit is −198 dBc/Hz.