Open AccessDemonstration of wafer‐level light emitting diode with very high output power
Author(s) -
Zhang Yibin,
Xu Fei,
Zhao Desheng,
Huang Hongjuan,
Wang Wei,
Xu Jianwei,
Cai Yong,
Shi Guangyi,
Lu Guojun,
Miao Zhenlin,
Qi Yundong,
Zhang Baoshun
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.3657
Subject(s) - optoelectronics , wafer , diode , power (physics) , light emitting diode , materials science , electrical engineering , electronic engineering , computer science , engineering , physics , quantum mechanics
Based on the optimised high‐voltage network design and the resistance matching technique, a wafer‐level light emitting diode (WL‐LED) with a light output power of 157 W has been successfully demonstrated for the first time. The external quantum efficiency of the fabricated WL‐LED was measured to be 24% at a driving current of 4 A.