Demonstration of wafer‐level light emitting diode with very high output power | Zendy

Zhang Yibin | Zendy; Xu Fei | Zendy; Zhao Desheng | Zendy; Huang Hongjuan | Zendy; Wang Wei | Zendy; Xu Jianwei | Zendy; Cai Yong | Zendy; Shi Guangyi | Zendy; Lu Guojun | Zendy; Miao Zhenlin | Zendy; Qi Yundong | Zendy; Zhang Baoshun | Zendy

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Demonstration of wafer‐level light emitting diode with very high output power

Author(s) -

Zhang Yibin,

Xu Fei,

Zhao Desheng,

Huang Hongjuan,

Wang Wei,

Xu Jianwei,

Cai Yong,

Shi Guangyi,

Lu Guojun,

Miao Zhenlin,

Qi Yundong,

Zhang Baoshun

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2014.3657

Subject(s) - optoelectronics , wafer , diode , power (physics) , light emitting diode , materials science , electrical engineering , electronic engineering , computer science , engineering , physics , quantum mechanics

Based on the optimised high‐voltage network design and the resistance matching technique, a wafer‐level light emitting diode (WL‐LED) with a light output power of 157 W has been successfully demonstrated for the first time. The external quantum efficiency of the fabricated WL‐LED was measured to be 24% at a driving current of 4 A.

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