Open AccessTrench SOI LDMOS with vertical field plate
Author(s) -
Wu Lijuan,
Zhang Wentong,
Shi Qin,
Cai Pengfei,
He Hangcheng
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.3443
Subject(s) - trench , silicon on insulator , ldmos , field (mathematics) , materials science , electrical engineering , structural engineering , optics , engineering , optoelectronics , transistor , physics , silicon , voltage , composite material , mathematics , layer (electronics) , pure mathematics
A novel vertical field plate (VFP) structure with low specific on‐resistance ( R on,sp ) is proposed. The VFP is inserted in the field oxide of the drift region with heavily doped N pillar parallel to the trench oxide layer (TOL), which depletes fully the drift region to decrease R on,sp effectively and enhances the bulk field (ENBULF). The VFP optimises the bulk electric field to increase the breakdown voltage (BV). The BV of VFP is 668 V with an R on,sp of 44.7 mΩ cm 2 , which is much lower than the silicon limit.