Open AccessCharge‐plasma‐based super‐steep negative capacitance junctionless tunnel field effect transistor: design and performance
Author(s) -
Singh S.,
Pal P.,
N. Kondekar P.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.3256
Subject(s) - materials science , ferroelectricity , optoelectronics , transconductance , debye length , capacitance , plasma , field effect transistor , doping , transistor , negative impedance converter , dopant , electrical engineering , dielectric , voltage , physics , electrode , voltage source , engineering , quantum mechanics
A double‐gate charge‐plasma‐based super‐steep negative capacitance junctionless tunnel field effect transistor (NC‐JLTFET) using a ferroelectric gate stack is proposed. Structurally, the NC‐JLTFET consists of a heavily doped n‐type silicon (Si) channel with two distinctive gates (control gate and fixed source gate). The fixed source gate accounts for the charge‐plasma (hole plasma) formation which results in surrogate p‐type doping by using work‐function engineering. It induces a uniform p‐region on the source side on the n‐type doped Si film having a thickness less than the Debye length ( L D ). The key attribute of the NC‐JLTFET is the ferroelectric gate stack which is employed as a control gate resulting in NC behaviour due to positive feedback among the electric dipoles in the ferroelectric material. The NC‐JLTFET endeavours to achieve a super‐steep sub‐threshold slope, a paramount boost in drive current and a substantial enhancement in peak transconductance ( g m ) than the JLTFET. Meanwhile, it embraces the inherent advantages of the charge‐plasma junctionless structure. Thus, it avails itself of a simple fabrication process flow and high immunity against process variations and random dopant fluctuations.