Open AccessAnalytical relationship between subthreshold swing of thermionic and tunnelling currents
Author(s) -
Hiblot G.,
Rafhay Q.,
Boeuf F.,
Ghibaudo G.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.3206
Subject(s) - quantum tunnelling , thermionic emission , subthreshold swing , subthreshold conduction , mosfet , swing , transistor , condensed matter physics , current (fluid) , semiconductor , physics , optoelectronics , quantum mechanics , voltage , electron , thermodynamics , acoustics
An analytical relationship between the subthreshold swing of the thermionic current and the tunnelling current is derived for double‐gate metal–oxide semiconductor field‐effect transistors (MOSFETs), based on the Wentzel‐Kramers‐Brillouin approximation. This formula allows predicting the behaviour of an ultimately scaled MOSFET in the subthreshold regime, as well as the performance of III–V devices.