Open AccessFabrication and measurement of graphene p–n junction with two top gates
Author(s) -
Liu Jingping,
SafaviNaeini Safieddin,
Ban Dayan
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.3061
Subject(s) - graphene , fabrication , terahertz radiation , materials science , optoelectronics , gate voltage , dielectric , p–n junction , logic gate , nonlinear system , voltage , gate dielectric , nanotechnology , electrical engineering , transistor , physics , semiconductor , engineering , quantum mechanics , medicine , alternative medicine , pathology
A graphene device with two top gates has been fabricated and measured for the first time. The thickness of the gate dielectric is 60 nm. The measurement results indicate that the externally applied gate biases can dope the underneath graphene to either p‐ or n‐type, forming an induced p–n junction. The current–voltage ( I–V ) curve measurement results also indicate that there is no nonlinear phenomenon in a weakly induced graphene p–n junction. This graphene p–n junction can potentially be used for terahertz wave generation.