Open AccessPhysical origin of gate voltage‐dependent drain–source capacitance in short‐channel MOSFETs
Author(s) -
Hong Seoyoung,
Lee Seonghearn
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.2971
Subject(s) - capacitance , channel length modulation , materials science , mosfet , optoelectronics , drain induced barrier lowering , equivalent series resistance , field effect transistor , transistor , channel (broadcasting) , short channel effect , voltage , saturation (graph theory) , threshold voltage , electrical engineering , engineering , electrode , physics , mathematics , quantum mechanics , combinatorics
For the first time, it is revealed that the physical origin of the gate–source voltage ( V gs )‐dependent drain–source capacitance in short‐channel metal–oxide semiconductor field‐effect transistors (MOSFETs) comes from the depletion capacitance components between the drain and channel end in the saturation region. On the basis of this origin, it is newly found that the V gs ‐dependent channel resistance should be connected in series with the drain–source capacitance to model the high‐frequency (HF) response of the intrinsic output capacitance. The accuracy of an improved MOSFET model, including the channel resistance, is validated by observing the excellent agreement with the measured S ‐parameters in the wide range of V gs up to 40 GHz.