Open Access5 × 5 scattered temperature sensor front‐end based on single‐doide with non‐trimmed ±0.7°C 3 σ relative inaccuracy
Author(s) -
Vosooghi Bozorgmehr,
Lu Li,
Li Changzhi
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.2915
Subject(s) - bipolar junction transistor , trimming , materials science , node (physics) , diode , chip , optoelectronics , cmos , voltage , atmospheric temperature range , junction temperature , transistor , electrical engineering , thermal , physics , engineering , acoustics , mechanical engineering , meteorology
A bipolar junction transistor (BJT)‐based scattered relative temperature sensor front‐end with a 5 × 5 remote sensor node array in 180 nm CMOS process is presented. To eliminate diode mismatches and reduce the sensor node area, a single‐diode approach that accurately switches different amounts of currents into a single PNP BJT is employed. Dynamic element matching (DEM) is applied to the current mirrors so that the current ratio is precisely controlled. The 5 × 5 sensor nodes with a unit size of only 15 × 10 µm 2 are distributed across the chip. Experimental results show that the minimum supply voltage (analogue) is 1 V over a temperature range of 0–125°C. The measured 3 σ relative inaccuracy was <±0.7°C without trimming across the 0–125°C temperature range while drawing a current of < 22 µA. Furthermore, the multi‐location thermal monitoring function has been demonstrated experimentally and a 4°C/mm on‐chip temperature gradient was detected.