
High‐performance full transparent tin‐doped zinc oxide thin‐film transistors fabricated on glass at low temperatures
Author(s) -
Chen Zhuofa,
Han Dedong,
Zhao Nannan,
Cong Yingying,
Wu Jing,
Huang Lingling,
Dong Junchen,
Zhao Feilong,
Liu Lifeng,
Zhang Shengdong,
Zhang Xing,
Wang Yi
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.2887
Subject(s) - materials science , thin film transistor , doping , zinc , tin , optoelectronics , tin oxide , thin film , transistor , zinc compounds , layer (electronics) , metallurgy , composite material , nanotechnology , electrical engineering , engineering , voltage
High‐performance full transparent bottom‐gate type tin‐doped zinc oxide thin‐film transistors (TZO TFTs) had been successfully fabricated by RF magnetron sputtering on glass substrates at low temperatures. The effect of O 2 /Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated and an optimised growing condition (O 2 /Ar gas flow ratio: 8/92) for TZO film as the channel layer was acheived. Excellent device performance was obtained, with a low off‐state current ( I off ) of 10 −12 A, a high on/off current ratio of 5 × 10 7 , a high saturation mobility ( μ s ) of 57 cm 2 /Vs, a steep subthreshold slope of 0.507 V/decade and a threshold voltage ( V th ) of 3.5 V. These results highlight that excellent device performance can be realised in TZO film and TZO TFT is a promising candidate for transparent flat panel display.