Open AccessMidwave infrared InSb n B n photodetector
Author(s) -
Evirgen A.,
Abautret J.,
Perez J.P.,
Cordat A.,
Nedelcu A.,
Christol P.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.2799
Subject(s) - photodetector , molecular beam epitaxy , optoelectronics , dark current , photodiode , materials science , substrate (aquarium) , detector , wavelength , layer (electronics) , infrared , reverse bias , optics , infrared detector , epitaxy , physics , nanotechnology , diode , oceanography , geology
The first demonstration of InSb photodetector with n B n design is reported. The n B n structure, grown by molecular beam epitaxy (MBE) on InSb substrate, is built by using n ‐type InSb as absorber layer and InAlSb alloy as barrier layer. The n B n detector, showing cut‐off wavelength of 5.4 µm at 77 K in photovoltaic mode, exhibits dark current density as low as 10 −9 A/cm 2 at −50 mV reverse bias, at least two decades lower than usual InSb photodiode.