Open AccessWideband absorber at X‐band adopting trumpet‐shaped structures
Author(s) -
Kim BeomKyu,
Lee Bomson
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.2780
Subject(s) - wideband , materials science , resonator , resistor , bandwidth (computing) , backplane , optics , optoelectronics , physics , electrical engineering , telecommunications , engineering , voltage
A wideband single‐layer absorber at X‐band adopting trumpet structures is presented. One unit of the proposed absorber is composed of a trumpet‐shaped resonator loading four chip resistors, a metallic backplane and an FR‐4 ( ε r = 4.4‐j0.02) substrate between them. The absorption is 99% at 10.9 GHz. The full width at half maximum is 95% at 12.7 GHz (6.7–18.7 GHz). The 90% absorption bandwidth is 65% at 12.75 GHz (8.6–16.9 GHz). The size of the unit cell is 5.6 × 5.6 × 2.4 mm 3 . The proposed absorber is almost insensitive to polarisations of incident waves due to the symmetry of the structure. The results of EM simulation and measurements are in good agreement.