Open AccessCharacterisation of THz emission from double‐metal‐patterned gallium–arsenide multiple emitters
Author(s) -
Gow P.C.,
McBryde D.,
Berry S.A.,
Barnes M.E.,
Apostolopoulos V.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.2751
Subject(s) - gallium arsenide , terahertz radiation , materials science , gallium , optoelectronics , metal , schottky diode , indium gallium arsenide , diode , metallurgy
Multiplexed gallium–arsenide (GaAs)‐based terahertz (THz) emitters fabricated with periodic double‐metal structures are demonstrated and the effect of different metals on the THz output is investigated. THz emission originates from the lateral photo‐Dember effect and from the different Schottky barrier heights of the chosen metal pair. The metal combinations used were Au–Al, Au–Pb and Cu–Cr. The emitters were characterised according to temperature and the highest peak‐to‐peak THz emission was achieved with the Cu–Cr metal pairing at 150 K.