Open AccessDistributed feedback 3.27 µm diode lasers with continuous‐wave output power above 15 mW at room temperature
Author(s) -
Liang R.,
Hosoda T.,
Shterengas L.,
Stein A.,
Lu M.,
Kipshidze G.,
Belenky G.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.2733
Subject(s) - diode , laser , power (physics) , continuous wave , materials science , optoelectronics , semiconductor laser theory , electrical engineering , optics , physics , engineering , quantum mechanics
GaSb‐based type‐I quantum well laterally coupled distributed feedback diode lasers emitting in the methane absorption band near 3.27 µm were designed and fabricated. The first‐order index grating with a period of 480 nm was defined by e‐beam lithography and etched on both sides of 6 µm‐wide shallow ridge waveguide. Coated 2 mm‐long devices demonstrated stable continuous‐wave single‐frequency operation in a wide temperature range with an output power of 15 mW at +17°C and 40 mW at −20°C. The Bragg wavelength temperature tuning rate was ∼0.27 nm/K.