3‐T ISFET front‐end utilising parasitic device capacitance | Zendy

Hu Yuanqi | Zendy; Georgiou Pantelis | Zendy

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3‐T ISFET front‐end utilising parasitic device capacitance

Author(s) -

Hu Yuanqi,

Georgiou Pantelis

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2014.2488

Subject(s) - capacitance , parasitic capacitance , front and back ends , isfet , materials science , electrical engineering , optoelectronics , differential capacitance , electronic engineering , electrode , engineering , transistor , field effect transistor , mechanical engineering , chemistry , voltage

A 3‐T ion sensitive field effect transistor (ISFET) chemical sensor that utilises the parasitic drain–gate capacitance of the device is proposed. It is compact and consumes extremely low power, and at the same time is immune to capacitive division. Additionally, it provides in‐pixel amplification dependent on the ratio of passivation and feedback (parasitic) capacitance. The fabricated sensor achieves 200 mV/pH sensitivity using this amplification mechanism.

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