Open Access3‐T ISFET front‐end utilising parasitic device capacitance
Author(s) -
Hu Yuanqi,
Georgiou Pantelis
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.2488
Subject(s) - isfet , capacitance , parasitic capacitance , materials science , capacitive sensing , passivation , optoelectronics , electrical engineering , transistor , field effect transistor , cmos , differential capacitance , sensitivity (control systems) , front and back ends , electronic engineering , electrode , nanotechnology , engineering , chemistry , voltage , layer (electronics) , mechanical engineering
A 3‐T ion sensitive field effect transistor (ISFET) chemical sensor that utilises the parasitic drain–gate capacitance of the device is proposed. It is compact and consumes extremely low power, and at the same time is immune to capacitive division. Additionally, it provides in‐pixel amplification dependent on the ratio of passivation and feedback (parasitic) capacitance. The fabricated sensor achieves 200 mV/pH sensitivity using this amplification mechanism.