Open Access2‐tap pre‐emphasis SST transmitter with skin effect loss equalisation in 65 nm CMOS technology
Author(s) -
Huang Ke,
Wang Ziqiang,
Zheng Xuqiang,
Zhang Chun,
Wang Zhihua
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.2466
Subject(s) - transmitter , cmos , emphasis (telecommunications) , transmitter power output , electrical engineering , gigabit , electronic engineering , input impedance , channel (broadcasting) , power (physics) , electrical impedance , materials science , telecommunications , computer science , engineering , physics , quantum mechanics
A 2‐tap pre‐emphasis SST transmitter with skin effect loss equalisation is presented. The transmitter features the ability of compensating the low frequency loss caused by the channel skin effect. The transmitter equalisation coefficient setting and driver impedance adjustment are mutually decoupled. Fabricated in 65 nm CMOS technology, the transmitter can operate up to 20 Gbit/s while consuming 39 mW of power under a 1 V power supply. The skin effect loss equalisation is verified with a 24‐inch FR4 channel under an 8 and 9 Gbit/s data rate.