Open AccessInAs/GaAs p – i – p quantum dots‐in‐a‐well infrared photodetectors operating beyond 200 K
Author(s) -
Park M.S.,
Jain V.,
Lee E.H.,
Kim S.H.,
Pettersson H.,
Wang Q.,
Song J.D.,
Choi W.J.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.2437
Subject(s) - photodetector , infrared , optoelectronics , quantum dot , quantum well infrared photodetector , gallium arsenide , quantum well , physics , materials science , optics , laser
High‐temperature operating performance of p – i – p quantum dots‐in‐a‐well infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p ‐doped self‐assembled InAs quantum dots (QDs) asymmetrically positioned in In 0.15 Ga 0.85 As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p – i – p QDIPs suitable for high‐temperature operation. The measured photoresponse reveals broad mid‐wave infrared (MWIR) detection up to 200 K.