Open Access1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
Author(s) -
Chen S.M.,
Tang M.C.,
Wu J.,
Jiang Q.,
Dorogan V.G.,
Benamara M.,
Mazur Y.I.,
Salamo G.J.,
Seeds A.J.,
Liu H.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.2414
Subject(s) - optoelectronics , materials science , lasing threshold , superlattice , laser , quantum dot , gallium arsenide , quantum dot laser , layer (electronics) , dislocation , semiconductor laser theory , optics , semiconductor , nanotechnology , physics , wavelength , composite material
A high‐performance 1.3 μm InAs/GaAs quantum‐dot laser directly grown on Si substrates has been achieved by using InAlAs/GaAs strained‐layer superlattice serving as dislocation filter layers (DFLs). The Si‐based laser achieves lasing operation up to 111°C with a threshold current density of 200 A/cm 2 and an output power exceeding 100 mW at room temperature.