Open AccessCorrelation of threading screw dislocation density to GaN 2‐DEG mobility
Author(s) -
Hite J.K.,
Gaddipati P.,
Meyer D.J.,
Mastro M.A.,
Eddy C.R.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.2401
Subject(s) - dislocation , heterojunction , channelling , materials science , gallium nitride , condensed matter physics , electron mobility , electron , induced high electron mobility transistor , optoelectronics , transistor , high electron mobility transistor , physics , layer (electronics) , composite material , ion , quantum mechanics , voltage
A direct correlation between local threading screw dislocation densities in an aluminium gallium nitride/gallium nitride (AlGaN/GaN) heterostructure and the mobility of electrons in the two‐dimensional electron gas (2‐DEG) formed at the interface of that heterostructure is presented. Threading screw dislocations are directly imaged through open areas of Hall‐effect test structures using electron channelling contrast imaging. The dislocation density measured for a given test structure is correlated to the mobility of the same structure. The results show a direct, negative correlation between mobility and screw/mixed dislocation density.