AC response of 0.35 µm CMOS triple‐junction photodetector

A vertically stacked triple‐junction photodiode (PD) is characterised for its suitability for sensor applications which demand a high speed. The proposed PD is implemented in a 0.35 µm CMOS process without process modifications. The AC performance of the detector is characterised at three wavelengths, blue (410 nm), green (520 nm) and red (675 nm). The measurements are carried out with a high dynamic range to fully characterise possible interactions between the different wavelengths (cross‐coupling mechanisms).