71% PAE C‐band GaN power amplifier using harmonic tuning technology | Zendy

Lu Yang | Zendy; Cao Mengyi | Zendy; Wei Jiaxing | Zendy; Zhao Bochao | Zendy; Ma Xiaohua | Zendy; Hao Yue | Zendy

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71% PAE C‐band GaN power amplifier using harmonic tuning technology

Author(s) -

Lu Yang,

Cao Mengyi,

Wei Jiaxing,

Zhao Bochao,

Ma Xiaohua,

Hao Yue

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2014.2092

Subject(s) - amplifier , materials science , power (physics) , optoelectronics , harmonic , rf power amplifier , electronic engineering , electrical engineering , physics , engineering , acoustics , cmos , quantum mechanics

A high‐efficiency C‐band internally matched power amplifier, developed with 12 mm AlGaN/GaN high‐electron mobility transistors is described. The second‐harmonic frequency (2 f 0 ) tuning network is applied to confine the impedance at 2 f 0 in safe efficiency regions. The packaged power amplifier achieves 71% power‐added efficiency (PAE) and 102 W output power, associated with 17 dB power gain. The PAE is believed to be the highest of the C‐band GaN power amplifiers reported to date.

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