Open Access71% PAE C‐band GaN power amplifier using harmonic tuning technology
Author(s) -
Lu Yang,
Cao Mengyi,
Wei Jiaxing,
Zhao Bochao,
Ma Xiaohua,
Hao Yue
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.2092
Subject(s) - amplifier , materials science , power (physics) , optoelectronics , harmonic , rf power amplifier , electronic engineering , electrical engineering , physics , engineering , acoustics , cmos , quantum mechanics
A high‐efficiency C‐band internally matched power amplifier, developed with 12 mm AlGaN/GaN high‐electron mobility transistors is described. The second‐harmonic frequency (2 f 0 ) tuning network is applied to confine the impedance at 2 f 0 in safe efficiency regions. The packaged power amplifier achieves 71% power‐added efficiency (PAE) and 102 W output power, associated with 17 dB power gain. The PAE is believed to be the highest of the C‐band GaN power amplifiers reported to date.