Open AccessEffects of nitrogen flow rate in ohmic contacts on InAlN/GaN heterostructures
Author(s) -
Geum DaeMyeong,
Shin Seungheon,
Park MinSu,
Jang JaeHyung
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.2061
Subject(s) - ohmic contact , materials science , annealing (glass) , contact resistance , nitrogen , electrical resistivity and conductivity , heterojunction , volumetric flow rate , optoelectronics , analytical chemistry (journal) , metallurgy , composite material , electrical engineering , chemistry , thermodynamics , physics , organic chemistry , layer (electronics) , chromatography , engineering
The effects of nitrogen (N 2 ) flow rate during high‐temperature annealing were investigated for Ti/Al/Ni/Au ohmic metallisation on InAlN/GaN heterostructures. The samples annealed at 900°C for 100 s at a 30 SCCM N 2 flow rate had the highest ohmic contact performance: a contact resistance of 0.12 Ω·mm, transfer length of 0.31 μm and specific contact resistivity of 3.42 × 10 −7 Ω·cm 2 .