Effects of nitrogen flow rate in ohmic contacts on InAlN/GaN heterostructures | Zendy

Geum DaeMyeong | Zendy; Shin Seungheon | Zendy; Park MinSu | Zendy; Jang JaeHyung | Zendy

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Effects of nitrogen flow rate in ohmic contacts on InAlN/GaN heterostructures

Author(s) -

Geum DaeMyeong,

Shin Seungheon,

Park MinSu,

Jang JaeHyung

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2014.2061

Subject(s) - ohmic contact , materials science , heterojunction , optoelectronics , nitrogen , engineering physics , nanotechnology , chemistry , engineering , organic chemistry , layer (electronics)

The effects of nitrogen (N 2 ) flow rate during high‐temperature annealing were investigated for Ti/Al/Ni/Au ohmic metallisation on InAlN/GaN heterostructures. The samples annealed at 900°C for 100 s at a 30 SCCM N 2 flow rate had the highest ohmic contact performance: a contact resistance of 0.12 Ω·mm, transfer length of 0.31 μm and specific contact resistivity of 3.42 × 10 −7 Ω·cm 2 .

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