12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis | Zendy

Liu Shuang | Zendy; Yu Guohao | Zendy; Fu Kai | Zendy; Tan Shuxin | Zendy; Zhang Zhili | Zendy; Zeng Chunhong | Zendy; Hou Keyu | Zendy; Huang Wei | Zendy; Cai Yong | Zendy; Zhang Baoshun | Zendy; Yuan Jinshe | Zendy

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12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis

Author(s) -

Liu Shuang,

Yu Guohao,

Fu Kai,

Tan Shuxin,

Zhang Zhili,

Zeng Chunhong,

Hou Keyu,

Huang Wei,

Cai Yong,

Zhang Baoshun,

Yuan Jinshe

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2014.2020

Subject(s) - high electron mobility transistor , materials science , hysteresis , optoelectronics , electrical engineering , transistor , condensed matter physics , voltage , engineering , physics

An AlGaN/GaN metal–oxide semiconductor (MOS) high‐electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al 2 O 3 gate dielectric films grown using atomic layer deposition. The MOS‐HEMT shows a low specific on‐resistance of 0.57 Ω·mm 2 , a large maximum saturate drain current of 12.5 A and a minimal threshold hysteresis of 0.05 V. Low specific on‐resistance, large maximum saturate drain current and minimal threshold hysteresis show that the fabricated MOS‐HEMT is very suitable for power switching applications.

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