Open Access12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis
Author(s) -
Liu Shuang,
Yu Guohao,
Fu Kai,
Tan Shuxin,
Zhang Zhili,
Zeng Chunhong,
Hou Keyu,
Huang Wei,
Cai Yong,
Zhang Baoshun,
Yuan Jinshe
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.2020
Subject(s) - high electron mobility transistor , materials science , optoelectronics , hysteresis , transistor , threshold voltage , substrate (aquarium) , layer (electronics) , electrical engineering , voltage , nanotechnology , condensed matter physics , oceanography , physics , geology , engineering
An AlGaN/GaN metal–oxide semiconductor (MOS) high‐electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al 2 O 3 gate dielectric films grown using atomic layer deposition. The MOS‐HEMT shows a low specific on‐resistance of 0.57 Ω·mm 2 , a large maximum saturate drain current of 12.5 A and a minimal threshold hysteresis of 0.05 V. Low specific on‐resistance, large maximum saturate drain current and minimal threshold hysteresis show that the fabricated MOS‐HEMT is very suitable for power switching applications.