Open Access60 GHz 28 nm CMOS transformer‐coupled power amplifier for WiGig applications
Author(s) -
Leite B.,
Kerhervé E.,
Ghiotto A.,
Larie A.,
Martineau B.,
Belot D.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.1979
Subject(s) - amplifier , cmos , electrical engineering , impedance matching , materials science , transistor , transformer , power added efficiency , power gain , electrical impedance , optoelectronics , electronic engineering , rf power amplifier , engineering , voltage
A 60 GHz power amplifier (PA) based on a 28 nm CMOS technology is presented for WiGig applications. It consists of a two‐stage pseudo‐differential common‐source structure using low‐power and low‐ V t transistors, capacitive neutralisation for isolation enhancement and integrated transformers for impedance matching, power splitting, power combining and balanced‐to‐unbalanced transformation purposes. The output‐stage transistors have a measured 1 dB output compression point (OCP 1 dB ) of 10.2 dBm, a 10.2 dB gain and a peak power added efficiency (PAE) as high as 35%. The fabricated PA achieves a 12 dBm OCP 1 dB , a 15.3 dB gain and a peak PAE better than 20% while occupying a silicon active area of only 0.037 mm 2 .