Open AccessCompact, high gain, hetero‐composite Nd:YVO 4 /SiC thin disk amplifier with advanced thermal management
Author(s) -
Newburgh G.A.,
Dubinskii M.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.1900
Subject(s) - materials science , amplifier , optoelectronics , laser , optics , gain , silicon carbide , diode , optical amplifier , laser power scaling , active laser medium , composite material , physics , cmos
A thermally advanced, Nd:YVO 4 amplifier at 1064 nm based on an 800 µm‐thick Nd:YVO 4 gain layer bonded to a silicon carbide (SiC) prism is demonstrated. The amplifier was tested in the ‘master oscillator–power amplifier’ configuration, where both the seed source and the amplifier were operated in a quasi‐continuous‐wave regime. The hetero‐composite Nd:YVO 4 /SiC gain element pumped by an 808 nm laser diode bar stack amplified the seed power in a range of 1–55 W with a gain of 4–2.6, respectively. The temperature profile of the gain element measured by a thermal camera indicated the maximum observed temperature excursion at pump saturation intensity to be only 27°C.