Compact, high gain, hetero‐composite Nd:YVO 4 /SiC thin disk amplifier with advanced thermal management | Zendy

Newburgh G.A. | Zendy; Dubinskii M. | Zendy

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Compact, high gain, hetero‐composite Nd:YVO 4 /SiC thin disk amplifier with advanced thermal management

Author(s) -

Newburgh G.A.,

Dubinskii M.

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2014.1900

Subject(s) - materials science , composite number , amplifier , optoelectronics , thermal , thermal management of electronic devices and systems , thin disk , thin film , high gain antenna , optical amplifier , optics , laser , composite material , computer science , physics , engineering , mechanical engineering , nanotechnology , cmos , stars , meteorology , computer vision

A thermally advanced, Nd:YVO 4 amplifier at 1064 nm based on an 800 µm‐thick Nd:YVO 4 gain layer bonded to a silicon carbide (SiC) prism is demonstrated. The amplifier was tested in the ‘master oscillator–power amplifier’ configuration, where both the seed source and the amplifier were operated in a quasi‐continuous‐wave regime. The hetero‐composite Nd:YVO 4 /SiC gain element pumped by an 808 nm laser diode bar stack amplified the seed power in a range of 1–55 W with a gain of 4–2.6, respectively. The temperature profile of the gain element measured by a thermal camera indicated the maximum observed temperature excursion at pump saturation intensity to be only 27°C.

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