Open AccessHigh‐frequency performance of AlGaN channel HEMTs with high breakdown voltage
Author(s) -
Nanjo T.,
Kurahashi K.,
Imai A.,
Suzuki Y.,
Nakmura M.,
Suita M.,
Yagyu E.
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2014.1874
Subject(s) - materials science , optoelectronics , cutoff frequency , transistor , high electron mobility transistor , channel (broadcasting) , breakdown voltage , wide bandgap semiconductor , voltage , electrical engineering , engineering
The high‐frequency characteristics of high electron mobility transistors applying AlGaN for a channel layer (AlGaN channel HEMTs) with greater impacts of alloy disorder scattering than those in conventional HEMTs with a GaN channel layer (GaN channel HEMTs) are investigated. The obtained electron saturation velocity was 4.7 × 10 6 cm/s and the cutoff frequency was 7 GHz in the AlGaN channel HEMTs with a gate length of 1 μm. These results are promising for several gigahertz band operations of AlGaN channel HEMTs.