High‐performance HfO 2 /ZrO 2 /IGZO thin‐film transistors deposited using atmospheric pressure plasma jet | Zendy

Wu ChienHung | Zendy; Chang KowMing | Zendy; Hsu HsinYu | Zendy

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High‐performance HfO 2 /ZrO 2 /IGZO thin‐film transistors deposited using atmospheric pressure plasma jet

Author(s) -

Wu ChienHung,

Chang KowMing,

Hsu HsinYu

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2014.1823

Subject(s) - materials science , thin film transistor , atmospheric pressure plasma , optoelectronics , atmospheric pressure , transistor , thin film , plasma , electrical engineering , nanotechnology , voltage , engineering , meteorology , physics , layer (electronics) , quantum mechanics

An atmospheric pressure plasma jet (APPJ) deposition technology that is employed for the preparation of transparent oxide semiconductors film using an eco‐friendly water‐based metal salt solution as a precursor is presented. Through the use of APPJ indium–gallium–zinc‐oxide (IGZO) film as the channel material and a high‐ k dielectric HfO 2 /ZrO 2 gate stack, IGZO‐based transparent thin‐film transistors (TFTs) were fabricated and characterised. The HfO 2 /ZrO 2 /IGZO‐TFTs by APPJ demonstrated excellent electrical characteristics, including a low V th of 0.63 V, a small subthreshold swing of 0.37 V/dec, a high mobility of 40 cm 2 /V‐s and a large I on / I off ratio of 7 × 10 8 .

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