Open AccessHigh‐performance HfO 2 /ZrO 2 /IGZO thin‐film transistors deposited using atmospheric pressure plasma jet
Author(s) -
Wu ChienHung,
Chang KowMing,
Hsu HsinYu
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.1823
Subject(s) - materials science , thin film transistor , atmospheric pressure plasma , optoelectronics , oxide , transistor , atmospheric pressure , dielectric , subthreshold slope , semiconductor , plasma , threshold voltage , nanotechnology , layer (electronics) , metallurgy , electrical engineering , oceanography , physics , engineering , quantum mechanics , voltage , geology
An atmospheric pressure plasma jet (APPJ) deposition technology that is employed for the preparation of transparent oxide semiconductors film using an eco‐friendly water‐based metal salt solution as a precursor is presented. Through the use of APPJ indium–gallium–zinc‐oxide (IGZO) film as the channel material and a high‐ k dielectric HfO 2 /ZrO 2 gate stack, IGZO‐based transparent thin‐film transistors (TFTs) were fabricated and characterised. The HfO 2 /ZrO 2 /IGZO‐TFTs by APPJ demonstrated excellent electrical characteristics, including a low V th of 0.63 V, a small subthreshold swing of 0.37 V/dec, a high mobility of 40 cm 2 /V‐s and a large I on / I off ratio of 7 × 10 8 .