Open AccessLow onset voltage of GaN on Si Schottky barrier diode using various recess depths
Author(s) -
Park Youngrak,
Kim JungJin,
Chang Woojin,
Jang HyunGyu,
Na Jeho,
Lee Hyunsoo,
Jun ChiHoon,
Cha Hoyoung,
Mun Jae Kyoung,
Ko Sang Choon,
Nam Eun Soo
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.1747
Subject(s) - materials science , optoelectronics , schottky diode , diode , reverse leakage current , voltage , schottky barrier , pin diode , wide bandgap semiconductor , leakage (economics) , electrical engineering , engineering , economics , macroeconomics
A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non‐recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude.