Open AccessLatched microswitches in laminates for high power 0–6.5 GHz applications
Author(s) -
Kim Sung Jun,
Zhang Yang,
Wang Minfang,
Bachman M.,
Li GuannPyng
Publication year - 2014
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2014.1709
Subject(s) - radio frequency , materials science , insertion loss , electrical engineering , rf power amplifier , power (physics) , transmission line , optoelectronics , electric power transmission , radio frequency power transmission , rf switch , electronic engineering , engineering , physics , amplifier , cmos , quantum mechanics
A microswitch designed for high power radio‐frequency (RF) applications is presented. A unique 3D transmission line is combined with a robust latched direct contact switch in this RF switch design. Each unit is fabricated in laminate panels before being singulated into pre‐packaged micro‐RF switches. High power RF tests reached 15 W at 1.9 GHz for this device. The switch has a good RF performance with −0.296 dB insertion loss and −22.03 dB isolation at 6.56 GHz.