Latched microswitches in laminates for high power 0–6.5 GHz applications | Zendy

Kim Sung Jun | Zendy; Zhang Yang | Zendy; Wang Minfang | Zendy; Bachman M. | Zendy; Li GuannPyng | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Latched microswitches in laminates for high power 0–6.5 GHz applications

Author(s) -

Kim Sung Jun,

Zhang Yang,

Wang Minfang,

Bachman M.,

Li GuannPyng

Publication year - 2014

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2014.1709

Subject(s) - radio frequency , materials science , insertion loss , electrical engineering , rf power amplifier , power (physics) , transmission line , optoelectronics , electric power transmission , radio frequency power transmission , rf switch , electronic engineering , engineering , physics , amplifier , cmos , quantum mechanics

A microswitch designed for high power radio‐frequency (RF) applications is presented. A unique 3D transmission line is combined with a robust latched direct contact switch in this RF switch design. Each unit is fabricated in laminate panels before being singulated into pre‐packaged micro‐RF switches. High power RF tests reached 15 W at 1.9 GHz for this device. The switch has a good RF performance with −0.296 dB insertion loss and −22.03 dB isolation at 6.56 GHz.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research